Productos R

R2714ZC18H

HIGH POWER THYRISTOR PHASE CONTROL

R3559TD30K

Features:

. All Diffused Structure

. Inter digitated Amplifying Gate Configuration

. Blocking capability up to 3000 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

 

R3559TD30K

HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

R3559TD30K-Nitro

HIGH POWER THYRISTOR FOR INVERTER  

R355CH12FLO

HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

R355CH12FLO.Nitro

HIGH POWER THYRISTOR FOR INVERTER  

R355CH12FNOA2W.Nitro

HIGH POWER THYRISTOR FOR INVERTER  

R355SH12FLO

Tiristor / SCR alta frecuencia/ High Frecuency Fase Control / Phase control

R7000645

Diodo rectificador Stud

R800CH18F2KO Nitro

HIGH POWER THYRISTOR PHASE CONTROL

RA08N1317M

Mitsubishi Silicon RF Power Semiconductor

RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

RA13H1317M

MITSUBISHI RF MosFet Module

135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO

RA30H1317M

MITSUBISHI RF MostFet Module, RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

RA60H1317M1A

MITSUBISHI RF MosFet Module, RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

RC020080

RC020080-KCCG11Series